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Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014.

Photo by D.L. Anderson for IEEE Spectrum

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Dr. Jayant Baliga, 2014 IEEE Medal of Honor winner, Director of the Power Semiconductor Research Center at NC State and inventor of the insulate-gate bipolar transistor (IGBT), Raleigh, North Carolina, Wed., March 19, 2014. <br />
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Photo by D.L. Anderson for IEEE Spectrum